2 edition of optical and structural study of ion beam synthesised Si/ß-FeSi2/Si(100) layered structures found in the catalog.
optical and structural study of ion beam synthesised Si/ß-FeSi2/Si(100) layered structures
Written in English
Thesis (Ph. D.) - University of Surrey, 1996.
|Contributions||University of Surrey. Department of Electronic and Electrical Engineering.|
Structural and ellipsometric study on tailored optical properties of tantalum oxynitride films deposited by reactive sputtering Angélique Bousquet 1,2, Fadi Zoubian 1,2, Joël Cellier 1,2, Christine Taviot-Gueho 1,2, T Sauvage 3 and Eric Tomasella 1,2. The ion beam synthesis of group IV (SiC) and II–VI (ZnS) compound nanoparticles in SiO2 layers is studied. These systems are potentially interesting for optoelectronic applications such as electroluminescent devices emitting in the visible and UV range. The combination of structural (transmission electron microscopy, electron and X-ray diffraction), optical (infrared and raman .
Why study a master's? Why Manchester? (taught master's) Taught master's Courses; Teaching and learning (taught master's) After you graduate (taught master's) Download a prospectus (taught master's) Admissions process (taught master's) Fees for taught master's study; Funding for taught master's study; Contact us (taught master's). The effects of low-energy (≤2 kV) Ar+ irradiation on the optical and structural properties of zinc oxide (ZnO) nanowires (NWs) grown by a simple and cost-effective low-temperature technique were investigated. Both photoluminescence spectra from ZnO NW-coated films and cathodoluminescence analysis of individual ZnO NWs demonstrated obvious evidences of .
Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air. J Appl Phys. ; – doi: / Martínez O, Plaza JL, Mass J, Capote B, Diéguez E, Jiménez J. Structural and optical characterization of pure ZnO films synthesised by thermal annealing on GaSb single crystals. Highly oriented and transparent ZnO thin films have been fabricated on ultrasonically cleaned quartz substrates by the sol-gel technique. X-ray diffraction, UV-VIS, FTIR, photoluminescence and SEM are used to characterize ZnO thin films. X-ray diffraction study show that all the films prepared in this work have hexagonal wurtzite structure, with lattice constants a = b = Å, .
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The structural and optical properties of β-FeSi2 precipitates in Si have been analyzed. Float zone Si samples were implanted at °C with keV Fe ions to fluences in. The structural and optical properties of Ion Beam Synthesised (IBS) semiconducting FeSi2 (beta-FeSi2) have been studied by transmission electron microscopy and Author: Zuoya Yang.
Ion beam mixing effects in metal/insulator systems have been investigated for a few metal/Si02 couples irradiated with different ions, with particular attention to Author: G.
Battaglin, S. Lo Russo, A. Paccagnella, P. Polato, G. Principa. Ion beam synthesized polycrystalline semiconducting FeSi 2 on Si() has been investigated by transmission measurements at temperatures between 10 and K.
The existence of a minimum direct band gap was demonstrated and its variation with the temperature was studied by means of a three‐parameter thermodynamic model and the Einstein model.
Band tail states and states Cited by: Structural and optical properties have been investigated for surface beta-FeSi2 layers on Si() and Si() formed by ion beam synthesis using Fe ion implantations.
The electrical and optical properties of FeSi2 structures produced by ion beam synthesis (IBS) are investigated. Above K both α and structures display good Schottky diode characteristics. Structural and optical properties have been investigated for surface beta-FeSi2 layers on Si() and Si() formed by ion beam synthesis using Fe ion.
High-energy ion beam irradiation of the polymers is an effective technique to enhance the electrical conductivity, structural property and mechanical properties. A Si-crystal layer on SiO 2 /Si was irradiated using MeV Kr +, Ag +, Au + and MeV Ag 2+, Au 2+ at ion fluences of × 10 15 – × 10 15 cm − induced structural modification in a Si crystal strongly influences ion-beam channelling phenomena through the introduced point defects, damage accumulation and induced internal strain.
β-FeSi 2 /Si light emitting devices (LEDs) have been attracting great interest since the first successful demonstration of an ion beam synthesised (IBS) device operating at a wavelength of μm.
We report here on a study of the electrical, electronic and optical properties of devices produced by Fe implantation into epitaxial silicon layers. Cobalt silicide layers were formed in Si and Si 1-x Ge x /Si heterostructures by using ion beam synthesis (IBS) at specified regimes and conditions.
Effect of the type of the initial target and its temperature during implantation on the phase composition and structure of synthesized layers were investigated. A continuous buried β‐FeSi 2 layer was obtained by implantation of keV Fe + ions into Si() wafers at elevated temperature.
During the subsequent rapid thermal annealing at °C for 10‐s, a continuous buried layer of the metallic α‐FeSi 2 phase is formed. During the second annealing step at °C, the α phase is completely transformed into the semiconducting β.
The electrical and optical properties of FeSi 2 structures produced by ion beam synthesis (IBS) are investigated. Above K both α and β FeSi 2 n-Si structures display good Schottky diode characteristics.
β FeSi 2 n-Si exhibits a low reverse leakage current up to −20 V after which abrupt avalanche breakdown occurs. As expected, the reverse leakage current of. β-FeSi2/Si light emitting devices (LEDs) have been attracting great interest since the first successful demonstration of an ion beam synthesised (IBS).
Ion irradiation was shown to controllably tune the structural, optical and plasmonic properties of Ag-TiO 2-PVA nanocomposite coating. The sun light induced photocatalytic capabilities of pristine and ion beam modified Ag-TiO 2. Abstract This study deals with structural and optical properties of β-FeSi 2 layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions.
By irradiation of 35 nm Fe on Si, at °C with keV Xe to 2×10 16 ions/cm 2, the formation of ∼ nm single-phase β-FeSi 2 layers was achieved.
Abstract β-FeSi 2 embedded in a Si matrix was prepared by ion beam synthesis (IBS). Two step implantation, with energies 60 and 20 keV, of two different doses of the iron ions, 5 × 10 15 and 5 × 10 16 cm −1, was performed.
After the implantation, the samples were subjected to rapid thermal annealing (RTA) at °C. The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x‐ray photoelectron spectroscopy (XPS).
The data obtained show the formation of an amorphous Si 1−x C x layer. Ion-beam synthesis of amorphous SiC ﬁlms: Structural analysis and recrystallization C.
Serre, L. Calvo-Barrio, A. Pe ´rez-Rodrıguez,a) A. Romano-Rodrıguez, and J. Morante E. E., Departament de Fı´sica Aplicada i Electro`nica, Universitat de Barcelona, Avda.
DiagonalBarcelona, Spain. Thin layers of cobalt disilicide have been produced by ion beam synthesis and their properties determined via electrical measurements and Rutherford backscattering. Thicknesses of the silicide layers depended on the ion dose and ranged between and A.
The silicide layers were highly conducting with some sheet resistivities below 1Ω/ corresponding to resistivities of. The exchange interaction in metal/semiconductor interfaces is far from being completely understood.
Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from nm to 4 nm.
The effects of the stoichiometry of the Si-rich oxide (SRO) layer, O/Si ratio, on the structural and optical properties of SRO/SiO 2 multilayer films were investigated in this work. SRO/SiO 2 multilayer films with different O/Si ratios were grown by a co-sputtering technique, and Si quantum dots (QDs) were formed with post-deposition annealing.
By transmission electron. The ion beam was generated by a transformer-coupled plasma ion source ( MHz) with a focusing triple grid extraction system with an opening diameter of 10 mm.
The sample holder was attached to a five-axes motion system allowing a deterministic movement in front of the ion beam.